Plasma Processing XIV: Proceedings of the International Symposium, Volume 14, Part 2002G. S. Mathad |
Contents
| 1 | |
| 10 | |
| 17 | |
| 25 | |
| 33 | |
| 43 | |
| 50 | |
| 61 | |
| 170 | |
| 179 | |
| 191 | |
| 199 | |
| 210 | |
| 218 | |
| 227 | |
| 239 | |
| 71 | |
| 84 | |
| 92 | |
| 106 | |
| 123 | |
| 137 | |
| 154 | |
| 162 | |
| 251 | |
| 263 | |
| 274 | |
| 290 | |
| 299 | |
| 305 | |
| 317 | |
Other editions - View all
Common terms and phrases
algorithms angular dependence aspect ratio atoms AVDC bottom BPSG chamber chemistry control charts decreases dependence of etching deposition rate device dielectric dry etching electron etch depth etch process etch rate etch-stop etching yield experimental Figure film fluorine fluorocarbon gate dielectrics gate oxide hole hydrogen implantation improvement increase ion bombardment ion energy ion flux layer main etch measured method microloading effect Motorola MSN statistic MSN_NR mTorr multi-wavelength multivariate neutral nitride nm/min normal process open area oxide etching oxygen parameters patent photoresist Phys plasma chemistry plasma etching plasma processing polymer pressure profile evolution radicals reaction reactor RF bias RF power sample sccm Semiconductor shot noise shown in Fig shows sidewall SiH4 silicon simulation single wavelength SiO2 sputtering substrate surface voltage TBTDET Technol temperature thickness tool trench etching type I error uncorrelated noise wafer wavelength yield curve
Popular passages
Page 60 - MK Weldon, VE Marsico, YJ Chabal, A. Agarwal, DJ Eaglesham, J. Sapjeta, WL Brown, DC Jacobson, Y. Caudano, SB Christman and EE Chaban, J. Vac. Sci. Technol. B 15, 1065 (1997).
Page 24 - This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan. Part of this work was carried out at the Strategic Research Base "Handai Frontier Research Center" supported by the Japanese Government's Special Coordination Fund for Promoting Science and Technology.
Page 173 - The authors would like to thank the National Science Council of the Republic of China for financially supporting this research under Contract No.
Page 17 - Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, JAPAN...
Page 162 - Micron Technology, Inc. 8000 S. Federal Way, PO Box 6 Boise, ID, USA 83707-0006 Geometry structure dependent charging, caused by the difference in the angular distribution functions for electron and ions, has been investigated using a Kelvin probe.
Page 84 - Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University...
Page 1 - Thin Film Microelectronics Research Laboratory Department of Chemical Engineering, Texas A&M University College Station, TX 77843-3122, USA "University of Skop|e, Macedonia PECVD boron-doped amorphous silicon deposition process has been studied.
Page 273 - NR Rueger, JJ Beulens, M. Schaepkens, MF Doemling, JM Mirza, TEFM Standaert, and GS Oehrlein, J. Vac. Sci. Technol.
Page 185 - The technical material discussed in this paper was accomplished with the support of the German Federal Research and Technology Department from Grant number 01M2992. The responsibility for the technical content of this publication is solely the authors'.
Page 82 - GS Hwang, CM Anderson, MJ Gordon, TA Moore, TK Minton, and KP Giapis, Phys. Rev. Lett. 77, 3049 (1996).